Ultralow resistance-area product of 0.4Ω(μm)2 and high magnetoresistance above 50% in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
2006; American Institute of Physics; Volume: 89; Issue: 16 Linguagem: Inglês
10.1063/1.2352046
ISSN1520-8842
AutoresYoshinori Nagamine, H. Maehara, K. Tsunekawa, D. D. Djayaprawira, Naoki Watanabe, Shinji Yuasa, Koji Ando,
Tópico(s)Physics of Superconductivity and Magnetism
ResumoAn ultralow resistance-area (RA) product of 0.4Ω(μm)2 was achieved in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with a high magnetoresistance ratio of 57% at room temperature. Various growth conditions for polycrystalline MgO(001) tunneling barrier were optimized to improve the crystalline orientation of the MgO(001) layer, which resulted in a significant enhancement of magnetoresistance in an ultralow RA region below 1Ω(μm)2. Removal of residual H2O molecules from a growth chamber was especially effective in improving the crystalline orientation. The present achievements will enable the development of highly sensitive read heads for ultrahigh-density hard disk drives.
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