Ni 3 d – B N π hybridization at the h − B <mml:mi mathvariant="normal…
2004; American Physical Society; Volume: 70; Issue: 16 Linguagem: Inglês
10.1103/physrevb.70.165404
ISSN1550-235X
AutoresAlexei B. Preobrajenski, А. С. Виноградов, N. Mårtensson,
Tópico(s)Semiconductor materials and interfaces
ResumoThe electronic structure of $h\text{\ensuremath{-}}\mathrm{B}\mathrm{N}$ films grown on the Ni(111) surface has been studied as a function of film thickness using the synchrotron radiation based spectroscopic techniques: soft x-ray absorption, core-level photoemission and resonant Auger spectroscopy. A manifestation of the strong orbital hybridization between Ni $3d$ and $h\text{\ensuremath{-}}\mathrm{B}\mathrm{N}\phantom{\rule{0.3em}{0ex}}\ensuremath{\pi}$ states has been consistently observed in all spectra, implying a rather strong interfacial interaction between $h\text{\ensuremath{-}}\mathrm{B}\mathrm{N}$ and the substrate. In the B $1s$ and N $1s$ near-edge x-ray absorption fine structure of both bulk $h\text{\ensuremath{-}}\mathrm{B}\mathrm{N}$ and a single monolayer adsorbed on Ni(111) we observe spectral structures, which can be interpreted as a manifestation of the interlayer conduction-band states of $h\text{\ensuremath{-}}\mathrm{B}\mathrm{N}$.
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