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High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering

1990; Springer Science+Business Media; Volume: 19; Issue: 1 Linguagem: Inglês

10.1007/bf02655552

1543-186X

J. S. Major, L. J. Guido, N. Holonyak, K. C. Hsieh, E. J. Vesely, D. W. Nam, D. C. Hall, J. E. Baker, P. Gavrilović, Kathleen Meehan, W. Stutius, J. E. Williams,

Photonic and Optical Devices