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Nanometer scale fabrication in mercury cadmium telluride using methane/hydrogen electron cyclotron resonance microwave plasmas

1993; American Institute of Physics; Volume: 62; Issue: 19 Linguagem: Inglês

10.1063/1.109390

1520-8842

Charles R. Eddy, E. A. Dobisz, C. A. Hoffman, J. R. Meyer,

Semiconductor Quantum Structures and Devices

The fabrication of nanometer scale features in the narrow gap, compound semiconductor mercury cadmium telluride has been demonstrated through the application of e-beam lithography and reactive ion etching with an electron cyclotron resonance (ECR) microwave generated methane/hydrogen plasma. The effects of methane concentration, substrate bias, total pressure, and substrate position with respect to the ECR condition on etch rate, anisotropy, and overall etch performance have been examined. The optimized process resulting from these studies has produced the first mercury-based nanostructures consisting of 30–60 nm features with sidewall angles of 88°.