High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform
2005; American Institute of Physics; Volume: 87; Issue: 10 Linguagem: Inglês
10.1063/1.2037200
ISSN1520-8842
AutoresJifeng Liu, Jürgen Michel, Wojciech Giziewicz, Dong Pan, Kazumi Wada, D.D. Cannon, Samerkhae Jongthammanurak, David T. Danielson, Lionel C. Kimerling, Jian Chen, F. Ömer İlday, Franz X. Kärtner, J. Yasaitis,
Tópico(s)Thin-Film Transistor Technologies
ResumoWe demonstrate a high-performance, tensile-strained Ge p-i-n photodetector on Si platform with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz measured at λ=1040nm. The full bandwidth of the photodetector is achieved at a low reverse bias of 1 V, compatible with the low driving voltage requirements of Si ultralarge-scale integrated circuits. Due to the direct bandgap shrinkage induced by a 0.20% tensile strain in the Ge layer, the device covers the entire C band and a large part of the L band in telecommunications. The responsivities of the device at 850, 980, 1310, 1550, and 1605 nm are 0.55, 0.68, 0.87, 0.56, and 0.11A∕W, respectively, without antireflection coating. The internal quantum efficiency in the wavelength range of 650–1340 nm is over 90%. The entire device was fabricated using materials and processing that can be implemented in a standard Si complementary metal oxide semiconductor (CMOS) process flow. With high speed, a broad detection spectrum and compatibility with Si CMOS technology, this device is attractive for applications in both telecommunications and integrated optical interconnects.
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