Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain
2005; Elsevier BV; Volume: 508; Issue: 1-2 Linguagem: Inglês
10.1016/j.tsf.2005.07.339
ISSN1879-2731
AutoresTatsuro Maeda, Keiji Ikeda, Shu Nakaharai, Tsutomu Tezuka, Naoharu Sugiyama, Yoshihiko Moriyama, Shinichi Takagi,
Tópico(s)Nanowire Synthesis and Applications
ResumoGe-on-insulator (GOI) layer by the Ge-condensation technique is characterized from the viewpoint of the carrier transport. We fabricate GOI channel metal-oxide-semiconductor field-effect transistors (MOSFETs) featuring ultra-low Schottky barrier metal source/drain for holes using Pt germanide where a buried oxide and a silicon substrate are used as a gate dielectric and a bottom gate electrode, respectively. P-type and N-type channel MOSFET operations in the accumulation and inversion mode, respectively, are demonstrated successfully, according to Schottky barrier heights for each carrier. Hall measurement for the GOI layers indicates the existence of relatively high carrier density of holes, 1.3 × 1017 cm− 3, which is not attributable to doped impurities.
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