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Irradiation effects of helium ions on the structure of amorphous Pd0.8Si0.2 alloy

1979; Elsevier BV; Volume: 79; Issue: 2 Linguagem: Inglês

10.1016/0022-3115(79)90113-2

1873-4820

Tetuo Ayano, Hideo Ohno, Kazuo Utumi, Kazutaka Kawamura, Kazuo Furukawa,

Glass properties and applications

Several irradiated NixP1−x samples for 0.15< x < 0.26 have been studied before and after exposure to a neutral fluence of the order of 5.91 × 1010 cm−2. The results of the X-ray diffractograms indicate that the system has suffered structural relaxations produced from atomic rearrangements within the amorphous phase. These structural changes were more pronounced for samples of phosphorus content far from the eutectic point, however, in all samples the system has relaxed to an amorphous phase after a short period of time. The d.c. electrical resistivity has been measured before and after irradiation in a temperature range from 10 to 300 K, and the data of all measured samples do not exhibit a noticeable change due to radiation effects. The results of these measurements indicate that in NiP metallic glasses the disorder in the system has little effect on the resistivity and the observed negative temperature coefficient of resistivity (TCR). The minimum of the resistivity in this system is attributed to a competition between the classical Boltzman contribution and Kondo-type magnetic scattering.