Portal de Periódicos da CAPES

Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen

1993; American Institute of Physics; Volume: 63; Issue: 11 Linguagem: Inglês

10.1063/1.110758

1520-8842

E. Cartier, J. H. Stathis, D. A. Buchanan,

Ion-surface interactions and analysis

Atomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0→PbH and PbH+H0→Pb+H2. The passivation reaction occurs more efficiently keeping the steady-state Pb density at a low value of only 3–6×1011 cm−2 during atomic hydrogen exposure. This low Pb density can only account for a small fraction of the total number of interface states produced by atomic hydrogen.