Vapor–Liquid–Solid Growth of Silicon–Germanium Nanowires
2003; Volume: 15; Issue: 24 Linguagem: Inglês
10.1002/adma.200306035
ISSN1521-4095
AutoresK.‐K. Lew, L. Pan, Elizabeth C. Dickey, Joan M. Redwing,
Tópico(s)Anodic Oxide Films and Nanostructures
ResumoSiGe alloy nanowires (see Figure) have been fabricated using vapor–liquid–solid (VLS) growth with silane (SiH 4 ) and germane (GeH 4 ) gas sources. Growth conditions have been identified that produce nanowires with homogeneous alloy composition with negligible Ge coating on the wire surface. The Ge composition in the nanowire can be controlled by varying the inlet GeH 4 /(GeH 4 + SiH 4 ) gas ratio.
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