Polarized memory switching effects in Ag2Se/Se/M thin film sandwiches
1982; Elsevier BV; Volume: 97; Issue: 2 Linguagem: Inglês
10.1016/0040-6090(82)90225-5
ISSN1879-2731
AutoresJ.C. Bérnède, A. Conan, E. Fouesnant, B. El Bouchairi, G. Goureaux,
Tópico(s)Neural dynamics and brain function
ResumoThe current-voltage characteristics of Ag2Se/Se/M thin film sandwiches were studied as functions of the shapes of the electrodes, which were either symmetrical or asymmetrical, as well as their composition (M is a metal (gold, chromium or silver) or Ag2Se). A polarized memory switching effect independent of air exposure was observed. The first commutation occurs at a formation voltage VF which is dependent on the selenium thickness. After some cycles this voltage stabilizes to a value VS (where VS<VF). VS is a function of temperature, frequency and the maximum reverse voltage but is independent of the selenium thickness. All these results are explained in terms of Ag+ ionic diffusion: the formation is related to the growth of Ag2Se dendrites through selenium as shown by temperature-dependent experiments. Furthermore the variations in VS are accounted for by ionic motion localized at the M-Se interface.
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