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Mechanism of piezoresistance in p-type Ge

1991; Elsevier BV; Volume: 79; Issue: 12 Linguagem: Inglês

10.1016/0038-1098(91)90003-e

1879-2766

Y. Ohmura,

Advanced MEMS and NEMS Technologies

By conductivity calculations for the degenerate valence bands in Ge with and without stress, we show for the first time that the principal mechanism for piezoresistance in p-type Ge is the stress-proportional mobility change of holes, but the carrier redistribution is the second order effect. Energy dependent conductivity effective masses, which tend to ellipsoidal masses at the band edges from the heavy- and light-hole masses at high hole energy may be associated with the hole mobility change.