Novel seeding technique for growing KTiOPO4 single crystals by the TSSG method
2002; Elsevier BV; Volume: 243; Issue: 3-4 Linguagem: Inglês
10.1016/s0022-0248(02)01534-8
ISSN1873-5002
AutoresIndranil Bhaumik, S. Ganesamoorthy, R. Bhatt, R. Sundar, A.K. Karnal, V. K. Wadhawan,
Tópico(s)Ferroelectric and Piezoelectric Materials
ResumoA method is described for growing inclusion-free crystals of KTP using 〈0 1 0〉 seed orientation. The top seeded solution growth technique is employed, along with a high rotation rate for the seed crystal, using a five-zone resistive-heating furnace. A minimum wastage of the seed is achieved by maintaining the seed–liquid interface by surface tension forces. Elements fabricated from KTP crystals under Type II phase matching for second-harmonic generation from Nd:YAG radiation exhibited a conversion efficiency exceeding 60% (without anti-reflection coating).
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