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Artigo Produção Nacional Revisado por pares
BIBTEX RIS

Evidence of quantum size effects in a-Si:H/a-SiCx:H superlattices. Observation of negative resistance in double barrier structures

1987; Elsevier BV; Volume: 97-98; Linguagem: Inglês

10.1016/0022-3093(87)90209-2

ISSN

1873-4812

Autores

I. Pereyra, M.N.P. Carreño, Roberto Koji Onmori, C.A. Sassaki, António Manuel Santos Spencer Andrade, F. Alvarez,

Tópico(s)

Silicon and Solar Cell Technologies

Resumo

Variations in the optical gap, in the parallel conductivity and in the conductivity activation energy were observed in A-Si:H/a-SiCx:H multilayers. These results are consistent with the existence of bounded states in the a-Si wells. Also, non linearities in the current vs. voltage curves of multiple a-SiCx:H barriers embedded in the intrinsic layer of n-i-n a-Si:H structures were studied. Several cases of negative resistence, even at room temperature, were found. These results are consistent with a "sequential tunneling" phenomenon, although a bulk effect cannot be ruled out.

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