Low hydrogen content in trimethylsilane-based dielectric barriers deposited by inductively coupled plasma
2002; American Institute of Physics; Volume: 81; Issue: 7 Linguagem: Inglês
10.1063/1.1500794
ISSN1520-8842
AutoresJia‐Min Shieh, Kou-Chiang Tsai, Bau‐Tong Dai,
Tópico(s)Semiconductor materials and devices
ResumoDielectric barriers of trimethylsilane-based hydrogenated amorphous silicon carbide (a-SiCx:H) for damascene metalization were synthesized by inductively coupled plasma (ICP) chemical vapor deposition methods. The high ionization efficiency from ICP, resulting in a-SiCx:H films that contain only a little hydrogen, is explored as a major mechanism that yields such a film not only with a high breakdown field of 3.7 MV/cm and a low leakage current <6.0×10−10 A/cm2 (at 1.0 MV/cm), but also with a low stress (−5 MPa) and high hardness (11 GPa). Additionally, the dielectric constant of the a-SiCx:H films is maintained below 4.2.
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