Portal de Periódicos da CAPES

High-field ZnO-based varistors

1995; Institute of Physics; Volume: 28; Issue: 4 Linguagem: Inglês

10.1088/0022-3727/28/4/023

1361-6463

A. Bui, Hung T. Nguyen, Antoine Loubière,

Silicon and Solar Cell Technologies

The role of principal additives is investigated in an attempt to obtain high-threshold-field ZnO-based varistors in the traditional way. In the order of effect level, these are Sb2O3, Co3O4, Cr2O3 and MnO2. In the range of 0.5-5 mol%, the increase of additive content decreases the average ZnO grain size. As a result, the number of grains per unit thickness increases, which gives rise to the threshold field. The value of barrier voltage vb calculated from experimental data is about 1.4-2 V. The potential barrier height determined from the temperature dependence of the current-voltage characteristics is 0.3-0.5 eV. The abnormally large vb of a sample doped with 8 mol% Sb2O3 is quantitatively interpreted by the influence of the spinel phase through the energy-band-bending effect caused by the Bi2O3-rich phase and the hypothesis of a 'preferential path' of the current.