Report on the growth of bulk aluminum nitride and subsequent substrate preparation
2001; Elsevier BV; Volume: 231; Issue: 3 Linguagem: Inglês
10.1016/s0022-0248(01)01452-x
ISSN1873-5002
AutoresJ. Carlos Rojo, Glen A. Slack, Kenneth E. Morgan, Balaji Raghothamachar, Michael Dudley, L. J. Schowalter,
Tópico(s)Metal and Thin Film Mechanics
ResumoHigh-quality, bulk aluminum nitride crystal grains exceeding 1 cm in dimension have been obtained using a self-seeded sublimation–recondensation growth technique at 0.9 mm/h driving rate. X-ray double crystal diffraction and topography show a full-width-at-half-maximum of around 100 arcsec and extensive areas with a density of dislocations less than 104 cm−2, respectively. These substrates have been prepared by chemical mechanical polishing techniques to obtain a surface roughness of 1.4–1.6 nm. The size, structural quality, and surface roughness prove these substrates to be adequate for III-nitride device fabrication.
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