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Photochemical dry etching of GaAs

1984; American Institute of Physics; Volume: 45; Issue: 8 Linguagem: Inglês

10.1063/1.95404

1520-8842

Carol I. H. Ashby,

Semiconductor materials and devices

GaAs exhibits greatly enhanced reactivity with gas-phase reactive Cl species when the surface is irradiated with low intensity laser light having a frequency which can excite above the band gap of GaAs. This laser-induced reactivity is shown to be photochemical rather than thermal in origin. This is the first reported observation of a purely photochemical dry etching process for a III-V semiconductor material.