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Detection mechanisms in silicon diodes used as α-particle and thermal neutron detectors

1981; Elsevier BV; Volume: 187; Issue: 2-3 Linguagem: Inglês

10.1016/0029-554x(81)90395-5

1872-9606

G. F. Cerofolini, G. Ferla, A. Foglio Para,

Radiation Detection and Scintillator Technologies

Abstract Some common silicon devices (diodes, RAMs etc.) can be used as α and thermal neutron detectors. An α resolution of ≅3% can be obtained utilizing p+/n or n+/p diodes with no external bias. Thermal neutronsare detected by means of the reaction 10B(n,α)7Li on the 10B present in the devices. Neutron efficiency has been substantially improved by implantation of 10B ions in the p+ region of the diodes. Experimental results allow us to clarify the carrier collection mechanisms throughout the device. Some current opinions in the field are contradicted.