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High-Performance Low-Temperature Poly-Silicon Thin Film Transistors Fabricated by New Metal-Induced Lateral Crystallization Process

1998; Institute of Physics; Volume: 37; Issue: 8R Linguagem: Inglês

10.1143/jjap.37.4244

1347-4065

Taekyung Kim, Tae-Hyung Ihn, Jae‐Shin Lee, Seung‐Ki Joo,

ZnO doping and properties

Effect of crystalline defects in metal-induced lateral crystallization (MILC) thin film transistors (TFTs) was studied and a new MILC method was proposed to improve the electrical properties of poly-Si TFTs. Defects at channel, which were formed by Ni in conventional MILC method, could be successfully removed by means of asymmetric Ni-deposition. Since the crystalline defects were removed at the channel, field-effect electron mobility increased by a large value up to 120 cm 2 /Vs, while the leakage current was reduced. Electrical properties of the TFTs fabricated by the new MILC method were dependent on which side of the channel was deposited with Ni.