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The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces

2012; American Institute of Physics; Volume: 111; Issue: 6 Linguagem: Inglês

10.1063/1.3693542

1520-8850

Ramsey Kraya, Laura Y. Kraya,

Semiconductor materials and devices

We have measured the electronic structure at Au nanoisland--niobium doped SrTiO3 interfaces over a range of contact diameters. Electron transport processes at the interface transition from thermionic emission dominated to tunneling dominated, leading to ohmic behavior at small sizes. The transition increases at a much higher rate than is generally expected, emphasizing the need for precise control of nanoscale dimensions for reproducible effects in nanoscale electronic devices.