Joining of Mo to CoSb3 by spark plasma sintering by inserting a Ti interlayer
2004; Elsevier BV; Volume: 58; Issue: 30 Linguagem: Inglês
10.1016/j.matlet.2004.07.041
ISSN1873-4979
AutoresJunfeng Fan, Lidong Chen, Shengqiang Bai, Xun Shi,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoCoSb3-based skutterudite compounds are promising candidates as advanced thermoelectric (TE) materials used in TE power generation. The electrode fabrication is one of the key techniques in constructing TE elements for the practical application. In the present study, sintering of CoSb3 powder and joining of CoSb3 to molybdenum electrode have been simultaneously performed by spark plasma sintering (SPS) technique. The insertion of Ti interlayer between Mo and CoSb3 is effective to join CoSb3 to Mo by forming an intermediate layer of TiSb at the Ti–CoSb3 boundary and a composition–gradient alloy layer at the Ti–Mo boundary. Potential voltage measurement results indicated that CoSb3/Ti/Mo joint interface has a low electrical resistance. The CoSb3/Ti/Mo joints also have a moderately high shearing strength and high thermal duration stability.
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