Cyclotron effective mass of holes in Si1− x Ge x /Si quantum wells: Strain and nonparabolicity effects
1994; American Institute of Physics; Volume: 64; Issue: 13 Linguagem: Inglês
10.1063/1.111830
ISSN1520-8842
AutoresJ.-P. Cheng, V. P. Kesan, Detlev Grützmacher, T. O. Sedgwick,
Tópico(s)Quantum and electron transport phenomena
ResumoThe Ge-composition dependence of cyclotron effective mass of quasi-two-dimensional holes in strained Si1−xGex/Si quantum well structures has been investigated by far-infrared magneto-optical spectroscopy at low temperatures and high magnetic fields up to 23 T. The in-plane effective mass determined from cyclotron resonance energies is much less than that of unstrained Si1−xGex alloys and decreases systematically from 0.40me to 0.29me as the Ge composition increases from x=0.13 to x=0.37, indicating the importance of the strain effect on the valence-band structure. The nonparabolicity correction is significant in explaining the discrepancy between the measured values and the calculated band-edge masses.
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