High temperature nitrogen annealing induced interstitial oxygen precipitation in silicon epitaxial layer on heavily arsenic-doped silicon wafer
2006; American Institute of Physics; Volume: 88; Issue: 24 Linguagem: Inglês
10.1063/1.2213516
ISSN1520-8842
AutoresQ. Wang, Manmohan Daggubati, Rong Yu, Xiao Feng Zhang,
Tópico(s)Semiconductor materials and interfaces
ResumoHigh temperature nitrogen annealing induced interstitial oxygen (Oi) precipitation has been investigated in silicon epitaxial layers (epilayers) grown on heavily arsenic-doped Czochralski silicon wafers. Both transmission electron microscopy and secondary ion mass spectrometry data indicate a strong Oi precipitation and/or segregation in the subsurface of epilayers annealed in N2 at 1200°C. The Oi precipitates have needlelike morphology with {111} habit planes along ⟨110⟩ directions. This precipitation is facilitated by thermal nitridation-produced vacancies or nitrogen-vacancy complexes and is sensitive to annealing conditions. Annealing in Ar or in N2 at temperature <1125°C results in no epilayer subsurface Oi precipitation.
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