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Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material

2011; American Institute of Physics; Volume: 99; Issue: 2 Linguagem: Inglês

10.1063/1.3610476

1520-8842

Himchan Oh, Sang‐Hee Ko Park, Chi‐Sun Hwang, Shinhyuk Yang, Min Ki Ryu,

ZnO doping and properties

A novel strategy to enhance the bias and illumination stress stability of oxide thin-film transistors (TFTs) is presented. The ultrathin positive charge barrier is employed to block the movement of photo-generated charges toward the interface between gate insulator and semiconductor under negative gate bias and illumination. This method can break through the limitation in stability enhancement caused by the inevitable oxygen vacancy and facilitates the fabrication of highly stable oxide TFTs at low process temperature.