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A Novel Photoconductive PVK/SiO 2 Interpenetrated Network Prepared by the Sol−Gel Process

2002; American Chemical Society; Volume: 107; Issue: 1 Linguagem: Inglês

10.1021/jp026759+

1520-6106

G. Ramos, Tomás Belenguer, Eusebio Bernabéu, Francisco del Monte, David Lévy,

Nonlinear Optical Materials Research

In this work, we describe the preparation of a novel photoconductive sol−gel material based on an organic/inorganic interpenetrating network (IPN). The composition of the sol−gel photoconductive material mimics the well-known polymeric one based on poly(N-vinylcarbazole) (PVK) as the charge-transporting matrix and 2,4,7-trinitro-9-fluorenone (TNF) as the sensitizer. The resulting photoconductive material (PVK/SiO_2 IPN) shows a photosensitivity of 10^-11 cm/(Ω W) in range to that reported for some analogue polymeric compounds and the highest ever reported for hybrid sol−gel materials.