Far-infrared study of substrate-effect on large scale graphene
2011; American Institute of Physics; Volume: 98; Issue: 20 Linguagem: Inglês
10.1063/1.3590773
ISSN1520-8842
AutoresJoo Youn Kim, Chul Lee, Sukang Bae, Keun‐Soo Kim, Byung Hee Hong, E. J. Choi,
Tópico(s)2D Materials and Applications
ResumoFrom far-IR Drude absorption measurement we determine carrier density (N) and carrier scattering rate (Γ) of graphene deposited on buffer-layer/SiO2 composite substrate. Two types of buffer-layers, (1) polar dielectric oxide ZnO and SrTiO3 (2) organic thin film hexamethyldisilazane and polymethyl methacrylate (PMMA) were studied. N varies widely over 0.12–11.8(×1012 cm−2) range depending on the buffer-layer. In contrast Γ remains almost constant, ∼100 cm−1, irrespective of the buffer-layers. This indicates that carrier mobility (μ) of graphene depends on substrate through N, but not by Γ as commonly believed.
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