Top electrode-dependent resistance switching behaviors of ZnO thin films deposited on Pt/Ti/SiO2/Si substrate
2011; Elsevier BV; Volume: 93; Linguagem: Inglês
10.1016/j.mee.2011.12.003
ISSN1873-5568
AutoresMing Hua Tang, Bo Jiang, Yong Xiao, Zheng Zeng, Zi Ping Wang, Jian Cheng Li, John He,
Tópico(s)Ferroelectric and Negative Capacitance Devices
ResumoPolycrystalline ZnO films are deposited on Pt/Ti/SiO2/Si substrate by chemical solution deposition (CSD) method. Metal/ZnO/Pt sandwich structures were constructed by depositing different top electrodes. Unipolar switching and bipolar switching characteristics were investigated in Pt/ZnO/Pt and Ag/ZnO/Pt structures, respectively. Analysis of linear fitting current–voltage curves suggests that the space charge limited leakage was observed as the limiting leakage mechanism of these two devices. And, the electrochemical migration of oxygen vacancies and metal ions resulted from the selecting electrodes was applied to explain the resistive switching behaviors.
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