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Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes

1999; Wiley; Volume: 176; Issue: 1 Linguagem: Inglês

10.1002/(sici)1521-396x(199911)176

1521-396X

M. Hansen, A. Abare, P. Kozodoy, Thomas Katona, Michael D. Craven, James S. Speck, Umesh K. Mishra, L.A. Coldren, Steven P. DenBaars,

Metal and Thin Film Mechanics

physica status solidi (a)Volume 176, Issue 1 p. 59-62 Original Paper Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes M. Hansen, M. Hansen Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorA. C. Abare, A. C. Abare Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorP. Kozodoy, P. Kozodoy Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorT. M. Katona, T. M. Katona Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorM. D. Craven, M. D. Craven Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorJ. S. Speck, J. S. Speck Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorU. K. Mishra, U. K. Mishra Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorL. A. Coldren, L. A. Coldren Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorS. P. DenBaars, S. P. DenBaars Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this author M. Hansen, M. Hansen Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorA. C. Abare, A. C. Abare Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorP. Kozodoy, P. Kozodoy Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorT. M. Katona, T. M. Katona Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorM. D. Craven, M. D. Craven Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorJ. S. Speck, J. S. Speck Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorU. K. Mishra, U. K. Mishra Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorL. A. Coldren, L. A. Coldren Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this authorS. P. DenBaars, S. P. DenBaars Materials and Electrical and Computer Engineering Departments, University of California, Santa Barbara, California 93106-5050, USA; Tel.: 1-(805)-893-8869; Fax: 1-(805)-893-8971;Search for more papers by this author First published: 22 November 1999 https://doi.org/10.1002/(SICI)1521-396X(199911)176:1 3.0.CO;2-BCitations: 6AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Abstract AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing resulting in higher voltages. Citing Literature Volume176, Issue1November 1999Pages 59-62 RelatedInformation