Tight-binding model for the x-ray absorption and emission spectra of dilute GaN x As 1 − x at the nitrogen …
2004; American Physical Society; Volume: 69; Issue: 15 Linguagem: Inglês
10.1103/physrevb.69.155210
ISSN1550-235X
AutoresE. Nodwell, M. Adamcyk, Anders Ballestad, T. Tiedje, S. Tixier, Scott Webster, Erin C. Young, A. Moewes, E.Z. Kurmaev, T. van Buuren,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoX-ray absorption and fluorescence spectra have been measured at the nitrogen K edge of dilute ${\mathrm{GaN}}_{x}{\mathrm{As}}_{1\ensuremath{-}x}$ alloys. The x-ray spectra are in good agreement with an ${\mathrm{sp}}^{3}{s}^{*}$ tight-binding model in which nitrogen is included in a supercell configuration and the disorder in the nitrogen distribution is neglected. A strong peak in the x-ray absorption spectrum is interpreted as a nitrogen resonant state in the conduction band rather than as an electron-hole exciton. The tight-binding calculation is also in good agreement with the observed nitrogen concentration dependence of the optical band gap.
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