Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method
2002; Wiley; Volume: 234; Issue: 3 Linguagem: Inglês
10.1002/1521-3951(200212)234
ISSN1521-3951
AutoresT. Miyajima, Yuki Kudo, K.-L. Liu, T. Uruga, Tetsuo Honma, Yoshiki Saito, Masaaki Hori, Yasushi Nanishi, Tsubasa Kobayashi, S. Hirata,
Tópico(s)Ga2O3 and related materials
ResumoWe investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In–N and In–In was estimated to be dIn–N = 0.215 nm and dIn–In = 0.353 nm, respectively. The In–N bond length of dIn–In = 0.353 nm was closed to the a-axis lattice constant of a = 0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few Å around In atoms.
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