Carbon nanotubes growth on silicon nitride substrates
2011; Elsevier BV; Volume: 65; Issue: 10 Linguagem: Inglês
10.1016/j.matlet.2011.02.046
ISSN1873-4979
AutoresIsadora Berlanga, Ruben Mas‐Ballesté, Félix Zamora, Jesús González‐Julián, Manuel Belmonte,
Tópico(s)Diamond and Carbon-based Materials Research
ResumoCarbon nanotubes were synthesized on silicon nitride substrates by thermal chemical vapour deposition using an iron precursor catalyst. The nanotubes were characterized by AFM, FESEM, TEM and micro-Raman spectroscopy. The surface topography of the substrate, dense and flat or porous and rough, controlled the catalyst distribution and carbon nanotubes growth. Flat surfaces led to the synthesis of single-walled carbon nanotubes, whereas the porous ones promoted the growth of multi-walled carbon nanotubes of 60 nm diameter. These nanotubes preferentially grew on the porous sites, exhibiting a good substrate–nanotube interface.
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