Room temperature multiferroic behavior of Cr-doped ZnO films
2008; American Institute of Physics; Volume: 104; Issue: 6 Linguagem: Inglês
10.1063/1.2978221
ISSN1520-8850
AutoresYuchao Yang, C. F. Zhong, X. H. Wang, Bingqiang He, Shiqiang Wei, Fei Zeng, Feng Pan,
Tópico(s)Magnetic and transport properties of perovskites and related materials
ResumoSingle-phase 9 at. % Cr-doped ZnO film has been prepared on Pt(111)/Ti/SiO2/Si(100) substrates by reactive sputtering method. The film is found to present ferroelectric and ferromagnetic behaviors simultaneously at room temperature, and it undergoes transitions to paraelectric and paramagnetic phases at ∼368–373 and ∼495 K, respectively. It is considered that the local electric dipoles induced by the distortions of CrO4 tetrahedra should be responsible for the ferroelectricity. On the other hand, the ferromagnetic ordering could be explained by the interaction of the localized spins with statically occupied polaron states. The multiferroic behavior adds a dimension to the multifunction of ZnO.
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