High temperature oxygen sensor based on sputtered cerium oxide
1995; Elsevier BV; Volume: 26; Issue: 1-3 Linguagem: Inglês
10.1016/0925-4005(94)01564-x
ISSN1873-3077
AutoresJ. Gerblinger, W. Lohwasser, U. Lampe, H. Meixner,
Tópico(s)Analytical Chemistry and Sensors
ResumoThe chemical stability at high temperature and the high diffusion coefficient of oxygen vacancies are reasons for selecting CeO2 as a promising material for fast oxygen sensors at high temperatures. To reach short response times of oxygen sensors based on semiconducting metal oxides it is necessary to realize the sensitive material in the form of a thin film. This can be done using the sputter process. Sputtered thin films of CeO2 like polycrystalline bulk materials present pure n-conducting behaviour in the temperature range 800–1100 °C. Above temperature of 900 °C response times of the sensitive material shorter than 50 ms due to a change in the oxygen partial pressure can be reached. The cross-sensitivities of CeO2 thin films on reactive gases like H2 and CH4 have been investigated.
Referência(s)