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Stacking fault probability in β-SiC grown by chemical vapour deposition

1991; Elsevier BV; Volume: 8; Issue: 4 Linguagem: Inglês

10.1016/0921-5107(91)90043-u

1873-4944

Yang‐Ming Lu, Min‐Hsiung Hon,

Semiconductor materials and devices

The stacking fault probability in β-SiC, grown by chemical vapour deposition (CVD), was measured using the X-ray diffraction method. Stacking faults on the {111} planes shifted the {111} and {200} X-ray diffraction peaks from which the stacking fault probability can be directly determined. The stacking fault probability increased with decreasing deposition temperature owing to low surface atomic mobility at lower deposition temperatures. At a low hydrogen flow rate, the stacking fault probability increased as a result of decreasing the probability of combination of the silicon and carbon atoms. A methyltrichlorosilane flow rate higher than 10 cm3 min−1 had little effect on the stacking fault probability. Increasing the free silicon content also increased the stacking fault probability. A uniform residual stress effect was observed in the transparent deposit using a polarization microscope.