Anisotropic etching of a fine column on a single crystal diamond
2001; Elsevier BV; Volume: 10; Issue: 9-10 Linguagem: Inglês
10.1016/s0925-9635(01)00404-6
ISSN1879-0062
AutoresYoshiki Nishibayashi, Yukio Ando, Hirohisa Saito, Takahiro Imai, Takashi Hirao, Kenjirou Oura,
Tópico(s)Semiconductor materials and devices
ResumoWe have fabricated very sharp tips, without slight slopes around their bases, on single crystal diamond for a field emitter by reactive ion etching (RIE) and a microwave plasma etching (MWPE) technique in CO2 and H2 gas. After a fine column was fabricated on a diamond surface by a RIE, it was reformed into a sharp tip by MWPE. It was found that MWPE in CO2 and H2 gas was an anisotropic etching for a fine column on diamond. When the CO2/H 2 ratio was less than 0.5%, the effect of etching was smaller. When the CO2/H 2 ratio was more than 5%, the etch pit of the diamond surface was larger and deeper. As the etching time increased, the etch pit and surface roughness also increased. The optimum conditions were as follows: CO2/H2=0.5% and etching time of 1–4 h. We have also accomplished the fabrication of slender sharp tips from a tall column by this technique. This is the first report on slender sharp tips of diamond fabricated under controlled conditions.
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