MATERIALS PROPERTIES OF NITRIDES: SUMMARY
2004; World Scientific; Volume: 14; Issue: 01 Linguagem: Inglês
10.1142/s012915640400220x
ISSN1793-6438
AutoresS. L. Rumyantsev, M. S. Shur, M. E. Levinshteĭn,
Tópico(s)Semiconductor materials and interfaces
ResumoInternational Journal of High Speed Electronics and SystemsVol. 14, No. 01, pp. 1-19 (2004) MaterialsNo AccessMATERIALS PROPERTIES OF NITRIDES: SUMMARYSERGEY L. RUMYANTSEV, MICHAEL. S. SHUR, and MICHAEL E. LEVINSHTEINSERGEY L. RUMYANTSEVDepartment of Electrical, Computer, and Systems Engineering Center for Broadband Data Transport Science and Technology CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA, MICHAEL. S. SHURDepartment of Electrical, Computer, and Systems Engineering Center for Broadband Data Transport Science and Technology CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA, and MICHAEL E. LEVINSHTEINSolid State Electronics Division, The Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021, St. Petersburg, Russiahttps://doi.org/10.1142/S012915640400220XCited by:16 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail References M. E. Levinshtein , S. L. Rumyantsev and M. S. Shur (eds.) , Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, and SiGe ( John Wiley and Sons , New York , 2001 ) . Google Scholar M. S. Shur , Introduction to Electronic Devices ( John Wiley and Sons , New York , 1996 ) . Google Scholar K. W. Boer , Survey of Semiconductor Physics. Electrons and Other Particles in Bulk Semiconductors ( Van Nostrand Reinhold , New York , 1990 ) . Crossref, Google Scholar R. E. Newnhams , Structure-Property Relations ( Springer-Verlag , New York , 1975 ) . Crossref, Google ScholarC. R. Aita, C. J. G. Kubiak and F. Y. H. Shih, J. Appl. Phys. 66, 4360 (1989), DOI: 10.1063/1.343986. Crossref, ISI, Google ScholarI. Akasaki and H. Amano, J. Electrochem. Soc 141, 2266 (1994), DOI: 10.1149/1.2055104. Crossref, ISI, Google ScholarI. Akasaki and M. Hashimoto, Sol. State Commun. 5, 851 (1967), DOI: 10.1016/0038-1098(67)90313-4. Crossref, ISI, Google ScholarJ. D. Albrechtet al., J. Appl. Phys. 83, 4777 (1998), DOI: 10.1063/1.367269. Crossref, ISI, Google ScholarO. Ambacheret al., Sol. State Comm. 97, 365 (1996), DOI: 10.1016/0038-1098(95)00658-3. Crossref, ISI, Google ScholarD. J. Aset al., Phys. Rev. B 54, Rl1118 (1996), DOI: 10.1103/PhysRevB.54.R11118. Google Scholar I. Barin , O. Knacke and O. Kubaschewski , Thermochemical properties of inorganic substances ( Springer-Verlag , Berlin-Heidelberg-New York , 1977 ) . Crossref, Google ScholarV. M. Bermudez, C.-I. Wu and A. Khan, J. Appl. Phys. 89, 1991 (2001), DOI: 10.1063/1.1333716. Crossref, ISI, Google ScholarV. M. Bermudezet al., J. Appl. Phys. 79, 110 (1996), DOI: 10.1063/1.360917. Crossref, ISI, Google ScholarF. Bernardini and V. Fiorentini, Appl. Phys. Lett. 80, 4145 (2002), DOI: 10.1063/1.1482796. Crossref, ISI, Google ScholarU. V. Bhapkar and M. S. Shur, J. Appl. Phys. 82, 1649 (1997), DOI: 10.1063/1.365963. Crossref, ISI, Google ScholarS. Bloomet al., Phys. Stat. Solidi 66, 161 (1974), DOI: 10.1002/pssb.2220660117. Crossref, ISI, Google ScholarP. Boguslawski, E. L. Briggs and J. Bernholc, Appl. Phys. Lett. 69, 233 (1996), DOI: 10.1063/1.117934. Crossref, ISI, Google ScholarO. Brandtet al., Physica E 2, 532 (1998), DOI: 10.1016/S1386-9477(98)00110-6. Crossref, Google Scholar G. Bu, D. Ciplys, M. Shur, L. J. Schowalter, S. Schujman, and R. Gaska, "Surface acoustic waves in single crystal bulk aluminum nitride" Appl. Phys. Lett, submitted 2003 . Google ScholarA. D. Bykhovski, B. L. Gelmont and M. S. Shur, J. Appl. Phys. 81, 6332 (1997), DOI: 10.1063/1.364368. Crossref, ISI, Google ScholarL. A. Chernyak, A. Osinsky and A. Schulte, Solid State Electronics 45, 1687 (2001), DOI: 10.1016/S0038-1101(01)00161-7. Crossref, ISI, Google ScholarV. W. L. Chin, T. L. Tansley and T. Osotchan, J. Appl. Phys. 75, 7365 (1994), DOI: 10.1063/1.356650. Crossref, ISI, Google ScholarT. L. Chu, D. W. Ing and A. J. Noreika, Sol. State Electron. 10, 1023 (1967), DOI: 10.1016/0038-1101(67)90152-9. Crossref, ISI, Google ScholarR. F. Daviset al., Gallium nitride materials - progress, status, and potential roadblocks, Proceedings of the IEEE90 (2002) pp. 993–1005. Google ScholarV. Yu. Davydovet al., Phys. Stat. Sol. b 229, R1 (2002). Crossref, Google ScholarV. Yu. Davydovet al., Phys. Stat. Sol. b 234, 787 (2002). Crossref, Google ScholarV. YU. Davydovet al., Phys. Rev. B 58, 12899 (1998), DOI: 10.1103/PhysRevB.58.12899. Crossref, ISI, Google ScholarV. YU. Davydovet al., Appl. Phys. Lett. 75, 3297 (1999), DOI: 10.1063/1.125330. Crossref, ISI, Google ScholarV. Yu. Davydovet al., Physica Status Solidi B 230, R4 (2002). Crossref, ISI, Google ScholarC. Degeret al., Appl. Phys. Lett. 72, 2400 (1998), DOI: 10.1063/1.121368. Crossref, ISI, Google Scholar H. Demiryont , L. R. Thompson and G. J. Collins , Appl. Optics 25 , 1311 . Crossref, ISI, Google ScholarR. Dingleet al., Phys. Rev. B 3, 497 (1971), DOI: 10.1103/PhysRevB.3.497. Crossref, ISI, Google Scholar A. V. Dmitriev and A. L. Oruzheinikov, in III-Nitride, SiC, and Diamond Materials for Electronic Devices (ed. by Gaskill D. K., C. D. Brandt, and R. J. Nemanich), "Radiative recombination rates in GaN, InN, AIN and their solid solutions Material Res. Soc. Symposium Proc., 423 (1996) 69-73 . Google ScholarJ. Edwardset al., Sol. State Commun. 3, 99 (1965), DOI: 10.1016/0038-1098(65)90231-0. Crossref, ISI, Google ScholarJ. W. Fan, M. F. Li and T. C. Chong, J. Appl. Phys. 79, 188 (1996), DOI: 10.1063/1.360930. Crossref, ISI, Google ScholarM. Fanciulli, T. Lei and T. D. Moustakas, Phys. Rev. B 48, 15144 (1993), DOI: 10.1103/PhysRevB.48.15144. Crossref, ISI, Google Scholar J. R. L. Fernandez et al. , Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature , GaN and Related Alloys - 1999. Symposium (Materials Research Society Symposium Proceedings Vol.595) ( Mater. Res. Soc , Warrendale, PA, USA , 2000 ) . Google ScholarD. I. Florescuet al., J. App. Phys. 88, 3295 (2000), DOI: 10.1063/1.1289072. Crossref, ISI, Google ScholarR. W. Francis and W. L. Worrell, J. Electrochem. Soc. 123, 3430 (1976), DOI: 10.1149/1.2132844. Google ScholarD. K. Gaskill, L. B. Rowland and K. Doverspike, Properties of Group III Nitrides, ed. J. Edgar (1995) pp. 101–116. Google ScholarS. A. Geidur and A. D. Yaskov, Opt. Spectrosc. 48, 1130 (1980). Google ScholarR. Goldhan and S. Shokhovets, III-nitride semiconductors optical properties II, eds. M. O. Manasreh and H. X. Jiang (Taylor & Francis, 2002) p. 7363. Google ScholarI. Gorczyca, A. Svane and N. E. Christensen, Internet Journ. of Nitride Sem. Research 2, (1997). Google ScholarW. Gotz and N. M. Jonson, Gallium Nitride (GaN) II, Semiconductors and Semimetals 57, eds. J. I. Pankove and T. D. Moustakas (Academic Press, 1999) p. 185. Crossref, Google ScholarO. Guoet al., Phys. Rev. B 55, R15987 (1997), DOI: 10.1103/PhysRevB.55.R15987. Crossref, ISI, Google ScholarO. Guoet al., Phys. Rev. B 64, 113105/1 (2001). ISI, Google ScholarO. Guo and A. Yoshida, Jpn. J. Appl. Phys. 33, 2453 (1994), DOI: 10.1143/JJAP.33.2453. Crossref, ISI, Google ScholarI. L. Guy, S. Muensit and E. M. Goldys, Appl. Phys. Lett. 75, 4133 (1999), DOI: 10.1063/1.125560. Crossref, ISI, Google ScholarH. Harima, Journal of Physics: Cond. Matter 14, R967 (2002), DOI: 10.1088/0953-8984/14/38/201. Crossref, ISI, Google ScholarB. Heyinget al., Appl. Phys. Lett. 77, 2885 (2000), DOI: 10.1063/1.1322370. Crossref, ISI, Google ScholarJ. Holstet al., Appl. Phys. Lett. 72, 1439 (1998), DOI: 10.1063/1.120588. Crossref, ISI, Google ScholarT. Inushimaet al., J. Cryst. Growth 227, 481 (2001). ISI, Google ScholarD. W. Jenkins and J. D. Dow, Phys. Rev. B 39, 3317 (1989), DOI: 10.1103/PhysRevB.39.3317. Crossref, ISI, Google ScholarH. X. Jiang, J. Y. Lin and W. W. Chow, III-nitride semiconductors optical properties I, eds. M. O. Manasreh and H. X. Jiang (Taylor & Francis, 2002) p. 960. Google ScholarD. J. Joneset al., J. Mater. Res. 14, 4337 (1999), DOI: 10.1557/JMR.1999.0587. Crossref, ISI, Google ScholarH.-Y. Jooet al., J. Vac. Sci. Technol, A 17, 862 (1999), DOI: 10.1116/1.582035. Crossref, ISI, Google ScholarA. Kampfeet al., High temperature material processes 2, 309 (1998). Crossref, ISI, Google ScholarA. Kasicet al., Phys. Rev. B 65, 115206/1 (2002). ISI, Google ScholarJ. G. Kimet al., Appl. Phys. Lett. 65, 91 (1994), DOI: 10.1063/1.113085. Crossref, ISI, Google ScholarJ. Kolniket al., J. Appl. Phys. 78, 1033 (1995), DOI: 10.1063/1.360405. Crossref, ISI, Google ScholarR. Y. Korotkov, J. M. Gregie and B. W. Wessels, Appl. Phys. Lett. 80, 1731 (2002), DOI: 10.1063/1.1456544. Crossref, ISI, Google ScholarV. I. Koshchenko, Y. K. Grinberg and A. F. Demidenko, Inorg. Mater. 20(11), 1787 (1984). Google ScholarD. Kotchetkovet al., Appl. Phys. Lett. 79, 4316 (2001), DOI: 10.1063/1.1427153. Crossref, ISI, Google ScholarS. Krukowskiet al., J. Phys. Chem. Solids 59, 289 (1998), DOI: 10.1016/S0022-3697(97)00222-9. Crossref, ISI, Google ScholarW. R. Lambrecht and B. Segall, Phys. Rev. B 47, 9289 (1993), DOI: 10.1103/PhysRevB.47.9289. Crossref, ISI, Google ScholarY. C. Lanet al., J. Cryst. Growth 207, 247 (1999), DOI: 10.1016/S0022-0248(99)00448-0. Crossref, ISI, Google ScholarM. Leszczynskiet al., Appl. Phys. Lett. 69, 73 (1996), DOI: 10.1063/1.118123. Crossref, ISI, Google ScholarD. Liufu and K. C. Kao, J. Vac. Sci. Technol. A 16, 2360 (1998), DOI: 10.1116/1.581352. Crossref, ISI, Google ScholarD. C. Looket al., Solid State Comm. 117, 571 (2001), DOI: 10.1016/S0038-1098(01)00010-2. Crossref, ISI, Google ScholarD. C. Looket al., Appl. Phys. Lett 80, 258 (2002), DOI: 10.1063/1.1432742. Crossref, ISI, Google ScholarS. Loughin and R. H. French, Properties of Group III nitrides, ed. J. H. Edgar (INSPEC publication, 1994) pp. 175–188. Google ScholarT. Matsuokaet al., Appl. Phys. Lett. 81, 1246 (2002), DOI: 10.1063/1.1499753. Crossref, ISI, Google ScholarL. E. McNeil, M. Grimsditch and R. F. French, J. Am. Ceram. Soc. 76, 1132 (1993), DOI: 10.1111/j.1151-2916.1993.tb03730.x. Crossref, ISI, Google ScholarW. J. Meng, Properties of Group III nitrides, ed. J. H. Edgar (INSPEC publication, 1994) pp. 22–29. Google ScholarS. N. Mohammed and H. Morkoc, Prog. Quant. El. 20, 361 (1996). Crossref, ISI, Google ScholarS. N. Mohammad, A. A. Salvador and H. Morkoc, Proc. IEEE 83, 1306 (1995), DOI: 10.1109/5.469300. Crossref, ISI, Google ScholarB. Monemaret al., Optical properties of GaN and related materials, Int. Symp. on Blue Laser and Light Emiting diodes (Chiba Univ.) pp. 135–140. Google ScholarB. Monemar, J. Material Sci.: materials in Electronics. 10, 227 (1999), DOI: 10.1023/A:1008991414520. Crossref, ISI, Google ScholarW. J. Moore, J. A. Freitas Jr. and R. J. Molnar, Phys. Rev. B 56, 12073 (1997), DOI: 10.1103/PhysRevB.56.12073. Crossref, ISI, Google ScholarW. J. Mooreet al., Phys. Rev. B 65, 081201/1 (2002). Google ScholarJ. F. Muthet al., MRS Internet J. Nitride Semicond. Res. 4S1, G5.2 (1999). Google ScholarJ. F. Muthet al., Appl. Phys. Lett. 71, 2572 (1997), DOI: 10.1063/1.120191. Crossref, ISI, Google ScholarJ. F. Muthet al., Appl. Phys. Lett. 71, 2572 (1997), DOI: 10.1063/1.120191. Crossref, ISI, Google ScholarR. S. Naiket al., IEEE Trans. Ultrason. Ferroelectr. Freq. Contr. UFFC 47, 292 (2000), DOI: 10.1109/58.818773. Crossref, ISI, Google ScholarS. Nakamura, T. Makai and M. Senoh, J. Appl. Phys. 71, 5543 (1992), DOI: 10.1063/1.350529. Crossref, ISI, Google ScholarJ. C. Nipkoet al., Appl. Phys. Lett 73, 34 (1998), DOI: 10.1063/1.121714. Crossref, ISI, Google ScholarJ. C. Nipko and C.-K. Loong, Phys. Rev. B 57, 10550 (1998), DOI: 10.1103/PhysRevB.57.10550. Crossref, ISI, Google ScholarJ. I. Pankove and H. Schade, Appl. Phys. Lett. 25, 53 (1974), DOI: 10.1063/1.1655276. Crossref, ISI, Google ScholarP. B. Perry and R. F. Rutz, Appl. Phys. Lett. 33, 319 (1978), DOI: 10.1063/1.90354. Crossref, ISI, Google ScholarA. Polian, M. Grimsditch and I. Grzegory, J. Appl. Phys. 79, 3343 (1996), DOI: 10.1063/1.361236. Crossref, ISI, Google ScholarS. K. O'Learyet al., Sol. St. Comm. 105, 621 (1998), DOI: 10.1016/S0038-1098(97)10207-1. Crossref, ISI, Google ScholarT. J. Schmidt and J.-J. Song, III-nitride semiconductors optical properties II, eds. M. O. Manasreh and H. X. Jiang (Taylor & Francis, 2002) p. 3. Google ScholarA. U. Sheleg and V. A. Savastenko, Izv. Akad. Nauk SSSR. Neorg. Mater. 15, 1598 (1979). Google ScholarM. S. Shur, B. Gelmont and A. Khan, J. Electronic Materials 25, 777 (1996), DOI: 10.1007/BF02666636. Crossref, ISI, Google ScholarE. K. Sichel and J. I. Pankove, J. Phys. Chem. Solids 38, 330 (1977), DOI: 10.1016/0022-3697(77)90112-3. Crossref, ISI, Google ScholarG. A. Slack and T. F. McNelly, J. Crystal Growth 34, 263 (1976), DOI: 10.1016/0022-0248(76)90139-1. Crossref, ISI, Google ScholarG. A. Slacket al., J. Phys. Chem. Solids 48, 641 (1987), DOI: 10.1016/0022-3697(87)90153-3. Crossref, ISI, Google ScholarC. Stampfl and C. G. Van de Walle, Phys. Rev., B 65, 155212/1 (2002). ISI, Google ScholarR. Stepniewskiet al., III-nitride semiconductors optical properties I, eds. M. O. Manasreh and H. X. Jiang (Taylor & Francis, 2002) p. 197. Google ScholarV. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992), DOI: 10.1116/1.585897. Crossref, ISI, Google ScholarJ. Sunet al., Phys. Lett, A 280, 381 (2001), DOI: 10.1016/S0375-9601(01)00087-1. Crossref, ISI, Google ScholarM. Suzuki and T. Uenoyama, J. Appl. Phys. 80, 6868 (1996), DOI: 10.1063/1.363755. Crossref, ISI, Google ScholarT. L. Tansley and C. P. Foley, Electron. Lett. 20, 1066 (1984), DOI: 10.1049/el:19840729. Crossref, ISI, Google ScholarT. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986), DOI: 10.1063/1.336906. Crossref, ISI, Google ScholarT. L. Tansley and R. J. Egan, Phys. Rev. B 45, 10942 (1992), DOI: 10.1103/PhysRevB.45.10942. Crossref, ISI, Google ScholarT. L. Tansley, Properties of Group III nitrides, ed. J. H. Edgar (INSPEC publication, 1994) pp. 35–40. Google ScholarK. Tsubouchi and N. Mikoshiba, IEEE Trans. Sonics Ultrason. SU 32, 634 (1985). Crossref, Google ScholarV. A. Tyagaiet al., Sov. Phys.-Semicond. 11, 1257 (1977). Google Scholar I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan, Band parameters for III-V compound semiconductors and their alloys", J. Appl Phys., 89, 5815-5875 (2001) I. Vurgaftman, J.R. Meyer, "Band parameters for nitrogen-containing semiconductors", J. Appl. Phys., 94, 3675-3696 (2003) . Google ScholarK. Wang and R. R. Reeber, Appl. Phys. Lett. 79, 1602 (2001), DOI: 10.1063/1.1400082. Crossref, ISI, Google ScholarA. M. Witowskiet al., Appl. Phys. Lett. 75, 4154 (1999), DOI: 10.1063/1.125567. Crossref, ISI, Google ScholarM. Wrabacket al., Appl. Phys. Lett 76, 1155 (2000), DOI: 10.1063/1.125968. Crossref, ISI, Google ScholarA. F. Wright, J. Appl. Phys. 82, 2833 (1997), DOI: 10.1063/1.366114. Crossref, ISI, Google ScholarC. I. Wu and A. Kahn, Appl. Phys. Lett. 74, 546 (1999), DOI: 10.1063/1.123140. Crossref, ISI, Google ScholarJ. Wu, H. Yaguchi and K. Onabe, III-nitride semiconductors optical properties II, eds. M. O. Manasreh and H. X. Jiang (Taylor & Francis, 2002) p. 363. Google ScholarJ. Wuet al., Appl. Phys. Lett. 80, 3967 (2002), DOI: 10.1063/1.1482786. Crossref, ISI, Google ScholarJ. Wuet al., Phys. Rev., B 66, 201403/1 (2002). ISI, Google ScholarX. Xuet al., J. Appl. Phys. 90, 6130 (2001), DOI: 10.1063/1.1413706. Crossref, ISI, Google ScholarY. C. Yeo, T. C. Chong and M. F. Li, J. Appl. Phys. 83, 1429 (1998), DOI: 10.1063/1.366847. Crossref, ISI, Google ScholarG. Yuet al., Appl. Phys. Lett. 70(24), 3209 (1997), DOI: 10.1063/1.119157. Crossref, ISI, Google ScholarX. Zhanget al., J. Appl. Phys. 89, 6165 (2001), DOI: 10.1063/1.1368162. Crossref, ISI, Google ScholarA. Zorodduet al., Phys. Rev. B 64, 045208/1 (2001), DOI: 10.1103/PhysRevB.64.045208. Google ScholarJ. Zouet al., Journal of Applied Physics 92, 2534 (2002), DOI: 10.1063/1.1497704. Crossref, ISI, Google ScholarD. I. Florescu, V. M. Asnin and F. H. Pollak, Compound Semiconductor 7, 62 (2001). Google ScholarW. Knapet al., Phys. Stat. Sol. 9(b) 216, 719 (1999). Crossref, Google Scholar G. Bu, D. Ciplus, M. Shur, L. J. Schowalter, S. Schujman, R. Gaska, "Surface acoustic wave velocity in single-crystal A1N substrates", unpublished . Google Scholar Remember to check out the Most Cited Articles! 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