In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution
2011; Elsevier BV; Volume: 257; Issue: 20 Linguagem: Inglês
10.1016/j.apsusc.2011.05.034
ISSN1873-5584
AutoresStephen McDonnell, D. M. Zhernokletov, Alexander P. Kirk, Jin-Soo Kim, Robert M. Wallace,
Tópico(s)Catalytic Processes in Materials Science
ResumoGaSb(0 0 1) was treated with (NH4)2Sx and the evolution of the interfacial chemistry was investigated, in situ, with monochromatic X-ray photoelectron spectroscopy (XPS), following heat treatment and exposure to trimethylaluminum (TMA) and deionized water (DIW) in an atomic layer deposition reactor. Elemental Sb (Sb–Sb bonding) as well as Sb3+ and Sb5+ chemical states were initially observed at the native oxide/GaSb interface, yet these diminished below the XPS detection limit after heating to 300 °C. No evidence of Ga–Ga bonding was observed whereas the Ga1+/Ga–S chemical state was robust and persisted after heat treatment and exposure to TMA/DIW at 300 °C.
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