Shubnikov‐de Haas investigations on n‐type Bi 2 (Se x Te 1− x ) 3
1976; Wiley; Volume: 78; Issue: 2 Linguagem: Inglês
10.1002/pssb.2220780223
ISSN1521-3951
AutoresH. Köhler, Wolfgang Haigis, A. von Middendorff,
Tópico(s)Cold Atom Physics and Bose-Einstein Condensates
ResumoAbstract Shubnikov‐de Haas magnetoresistance oscillations are observed in the mixed crystal system Bi 2 (Se x Te 1− x ) 3 for 0 < x ≦ 0.1 and 0.8 ≦ x < 1 at temperatures between 1.7 and 4 2 K in magnetic fields up to 10.5 T flux density. The electron concentrations ranged from 5 × 10 17 to 6.5 × 10 19 cm −3 . In both the separate ranges (Te‐rich and Se‐rich composition) the electronic mass parameters are essentially unchanged compared to pure Bi 2 Te 3 and Bi 2 Se 3 , respectively. For the Te‐rich side the energy gap between the lowest conduction band and the postulated second type of conduction band valleys decreases with increasing selenium content. The evaluated g ‐tensor ellipsoids correspond to the results for n‐Bi 2 Te 3 in the region 0 < x ≦ 0.1.
Referência(s)