Raman scattering in GaP/AlP short-period superlattices grown by gas source molecular beam epitaxy
1992; Elsevier BV; Volume: 60-61; Linguagem: Inglês
10.1016/0169-4332(92)90474-c
ISSN1873-5584
AutoresR. K. Soni, Hirosuke Asahi, Shūichi Emura, Tetsuya Watanabe, K. Asami, S. Gonda,
Tópico(s)Semiconductor materials and interfaces
ResumoAbstract e present Raman scattering characterization of short-period (GaP)n(AlP)m superlattices grown on GaAs (001) substrate by gas source MBE. Confined optical vibrations are observed in GaP and AlP layers which show strong sensitivity to the thickness. The measured confined frequencies are explained by considering an intermediate alloy layer in the interface plane due to short-range roughness. The influence of interface roughness on the behavior of confined vibrations is weak in thicker layer (n, m ≥5) but strong and asymmetrical in thin layer (n, m = 3) superlattices.
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