Two-dimensional magnetotransport in AlAs quantum wells
1987; American Physical Society; Volume: 35; Issue: 17 Linguagem: Inglês
10.1103/physrevb.35.9349
ISSN1095-3795
AutoresT. P. Smith, W. I. Wang, F. F. Fang, L. L. Chang,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoWe have made magnetotransport measurements on two-dimensional electronic systems confined to AlAs by ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As. We have determined the effective mass (${m}_{111}$=0.49${m}_{0}$), the effective g factor (3.1), and the relaxation time. Even though the lattice constants of GaAs and AlAs are nearly equal, the stress arising from this small mismatch strongly influences the electronic properties of AlAs. For [111]-oriented samples the valley degeneracy is one, and there is an anomalous phase shift in the Shubnikov--de Haas oscillations.
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