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On the static collector-emitter saturation voltage of a transistor with a lightly doped collector

1969; Institute of Electrical and Electronics Engineers; Volume: 57; Issue: 4 Linguagem: Inglês

10.1109/proc.1969.7048

1558-2256

W.J. Chudobiak,

Semiconductor Quantum Structures and Devices

A one-dimensional analysis which defines the static collector-emitter saturation voltage characteristic of epitaxial and triple-diffused transistors in terms of collector current, base current, and device parameters is given.