High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth
2009; American Institute of Physics; Volume: 95; Issue: 2 Linguagem: Inglês
10.1063/1.3182795
ISSN1520-8842
AutoresMasanobu Miyao, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoSingle-crystal Ge on a transparent insulating substrate is desired to achieve advanced thin-film transistors (TFTs) with high speed operation. We have developed the rapid-melting-growth process of amorphous Ge by using polycrystalline Si islands as the growth seed. High-quality and dominantly (100)-oriented single-crystal Ge stripes with 400 μm length are demonstrated on quartz substrates. The temperature dependence of the electrical conductivity shows a high hole mobility of 1040 cm2/V s. This method opens up a possibility of Ge-channel TFT with the high carrier mobility.
Referência(s)