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Analytical approach to the multi-state lasing phenomenon in quantum dot lasers

2013; American Institute of Physics; Volume: 102; Issue: 11 Linguagem: Inglês

10.1063/1.4795628

1520-8842

V. V. Korenev, А. V. Savelyev, A. E. Zhukov, Alexander Omelchenko, M. V. Maximov,

Photonic and Optical Devices

We introduce an analytical approach to describe the multi-state lasing phenomenon in quantum dot lasers. We show that the key parameter is the hole-to-electron capture rate ratio. If it is lower than a certain critical value, the complete quenching of ground-state lasing takes place at high injection levels. At higher values of the ratio, the model predicts saturation of the ground-state power. This explains the diversity of experimental results and their contradiction to the conventional rate equation model. Recently found enhancement of ground-state lasing in p-doped samples and temperature dependence of the ground-state power are also discussed.