Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector
2014; American Institute of Physics; Volume: 104; Issue: 21 Linguagem: Inglês
10.1063/1.4879851
ISSN1520-8842
AutoresE. García-Hemme, R. García-Hernansanz, J. Olea, David Pastor, A. del Prado, I. Mártil, G. González-Dı́az,
Tópico(s)Nanowire Synthesis and Applications
ResumoWe report room-temperature operation of 1 × 1 cm2 infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by a pulsed laser melting process. A high sub-band gap responsivity of 34 mV W−1 has been obtained operating at the useful telecommunication applications wavelength of 1.55 μm (0.8 eV). The sub-band gap responsivity shows a cut-off frequency as high as 1.9 kHz. These Si-based devices exhibit a non-previous reported specific detectivity of 1.7 × 104 cm Hz1/2 W−1 at 660 Hz, under a 1.55 μm wavelength light. This work shows the potential of Ti supersaturated Si as a fully CMOS-compatible material for the infrared photodetection technology.
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