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Temperature Dependence of the Phonons of Bulk AlN

2000; Institute of Physics; Volume: 39; Issue: 7B Linguagem: Inglês

10.1143/jjap.39.l710

1347-4065

Jonathan M. Hayes, Martin Kuball Martin Kuball, Ying Shi, James H. Edgar,

Thermal properties of materials

Micro-Raman scattering measurements were performed on bulk wurtzite AlN crystals over a temperature range from 10 K to 1275 K. The temperature dependence of the frequency of the AlN phonons follows an empirical relationship previously introduced for diamond. A temperature-induced frequency shift of the E 2 phonon of -(2.22±0.02)×10 -2 cm -1 /K was determined for high temperatures, which is similar to values reported for bulk GaN. The results provide the basis for the non-invasive monitoring of the temperature of (Al,Ga)N by Raman scattering.