Portal de Periódicos da CAPES

All-Solution-Processed n-Type Organic Transistors Using a Spinning Metal Process

2005; Volume: 17; Issue: 18 Linguagem: Inglês

10.1002/adma.200401672

1521-4095

T.‐W. Lee, Young Tae Byun, B. W. Koo, In‐Nam Kang, Y.‐Y. Lyu, Changhee Lee, Pu Li, Sang‐Yun Lee,

Advanced Memory and Neural Computing

Advanced MaterialsVolume 17, Issue 18 p. 2180-2184 Communication All-Solution-Processed n-Type Organic Transistors Using a Spinning Metal Process† T.-W. Lee, T.-W. Lee [email protected] Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, KoreaSearch for more papers by this authorY. Byun, Y. Byun Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, KoreaSearch for more papers by this authorB.-W. Koo, B.-W. Koo Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, KoreaSearch for more papers by this authorI.-N. Kang, I.-N. Kang Department of Chemistry, The Catholic University of Korea, 43-1 Yeokgok 2-dong, Wonmi-gu, Bucheon-Si, Gyeonggi-do, 420-743, KoreaSearch for more papers by this authorY.-Y. Lyu, Y.-Y. Lyu Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, KoreaSearch for more papers by this authorC. H. Lee, C. H. Lee School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, KoreaSearch for more papers by this authorL. Pu, L. Pu Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, Korea Dept. of Advanced Materials, Sungkyunkwan University, 300 Chunchun-Dong, Jangan-Gu, Suwon, Kyunggi-Do, 440-746, KoreaSearch for more papers by this authorS. Y. Lee, S. Y. Lee [email protected] Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, KoreaSearch for more papers by this author T.-W. Lee, T.-W. Lee [email protected] Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, KoreaSearch for more papers by this authorY. Byun, Y. Byun Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, KoreaSearch for more papers by this authorB.-W. Koo, B.-W. Koo Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, KoreaSearch for more papers by this authorI.-N. Kang, I.-N. Kang Department of Chemistry, The Catholic University of Korea, 43-1 Yeokgok 2-dong, Wonmi-gu, Bucheon-Si, Gyeonggi-do, 420-743, KoreaSearch for more papers by this authorY.-Y. Lyu, Y.-Y. Lyu Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, KoreaSearch for more papers by this authorC. H. Lee, C. H. Lee School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, KoreaSearch for more papers by this authorL. Pu, L. Pu Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, Korea Dept. of Advanced Materials, Sungkyunkwan University, 300 Chunchun-Dong, Jangan-Gu, Suwon, Kyunggi-Do, 440-746, KoreaSearch for more papers by this authorS. Y. Lee, S. Y. Lee [email protected] Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do, 449-712, KoreaSearch for more papers by this author First published: 08 August 2005 https://doi.org/10.1002/adma.200401672Citations: 91 † The authors acknowledge Dr. R. R. Das for the careful reading of the manuscript. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract An all-solution-processed n-type transistor of soluble fullerene derivatives, based on a photosensitive organic silver precursor route to deposit source and drain metal electrodes, is reported (see Figure). The field-effect mobility of such devices is strongly dependent on the morphology of the spin-cast semiconducting thin film. The devices fabricated in this manner show a higher electron mobility than devices fabricated by vacuum-shadow deposition. REFERENCES 1 G. Horowitz, Adv. Mater. 1998, 10, 365. 2 H. E. Katz, J. Mater. Chem. 1997, 7, 369. 3 E. J. Meijer, D. M. De Leeuw, S. Setayesh, E. Van Veenendaal, B.-H. Huisman, P. W. M. Blom, J. C. Hummelen, U. Scherf, T. M. Klapwijk, Nat. Mater. 2003, 2, 678. 4 T. D. Anthopoulos, C. Tanase, S. Setayesh, E. J. Meijer, J. C. Jummelen, P. W. M. Blom, D. M. de Leeuw, Adv. Mater. 2004, 16, 2174. 5 H. E. Katz, A. J. Lovinger, J. Johnson, C. Kloc, T. Siegrist, W. Li, Y.-Y. Lin, A. Dodabalapur, Nature 2000, 404, 478. 6 T. W. Kelley, L. D. Boardman, T. D. Dunbar, D. V. Muyres, M. J. Pellerite, T. P. Smith, J. Phys. Chem. B 2003, 107, 5877. 7 A. Afzali, C. D. Dimitrakopoulos, T. O. Graham, Adv. Mater. 2003, 15, 2066. 8 C. Waldauf, P. Schilinsky, M. Perisutti, J. Hauch, C. J. Brabec, Adv. Mater. 2003, 15, 2084. 9 A. Babel, S. A. Jenekhe, J. Am. Chem. Soc. 2003, 125, 13656. 10 A. Babel, S. A. Jenekhe, Adv. Mater. 2002, 14, 371. 11 V. D. Mihailetchi, J. K. J. van Duren, P. W. M. Blom, J. C. Hummelen, R. A. J. Jassen, J. M. Kroon, M. T. Rispens, W. J. H. Verhees, M. M. Wienk, Adv. Funct. Mater. 2003, 13, 43. 12 J. Lee, K. Kim, J. H. Kim, S. Im, D.-Y. Jung, Appl. Phys. Lett. 2003, 82, 4169. 13 A. R. Murphy, J. M. J. Fréchet, P. Chang, J. Lee, V. Subramanian, J. Am. Chem. Soc. 2004, 126, 1596. 14 J.-F. Chang, B. Sun, D. W. Breiby, M. M. Nielsen, T. I. Sölling, M. Giles, I. McCulloch, H. Sirringhaus, Chem. Mater. 2004, 16, 4772. 15 J. Zaumseil, T. Someya, Z. Bao, Y.-L. Loo, R. Cirelli, J. A. Rogers, Appl. Phys. Lett. 2003, 82, 463. 16 T.-W. Lee, J. Zaumseil, Z. Bao, J. W. P. Hsu, J. A. Rogers, Proc. Natl. Acad. Sci. USA 2004, 101, 429. 17 J. C. Hummelen, B. W. Knight, F. LePeq, F. Wudl, J. Org. Chem. 1995, 60, 532. Citing Literature Volume17, Issue18September, 2005Pages 2180-2184 ReferencesRelatedInformation