Artigo
Mechanism of the Slow-Down of the Silicon Etch Rate by a Fluorocarbon Overlayer in CF 4 /H 2 Reactive Ion Etching of Silicon
1987; Cambridge University Press; Volume: 98; Linguagem: Inglês
10.1557/proc-98-229
ISSN1946-4274
AutoresG. S. Oehrlein, Steve W. Robey, M. Jaso,
Tópico(s)Electron and X-Ray Spectroscopy Techniques
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