Artigo Revisado por pares

Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices

1997; Elsevier BV; Volume: 87; Issue: 1 Linguagem: Inglês

10.1016/s0379-6779(97)80097-5

ISSN

1879-3290

Autores

Dago M. de Leeuw, M.M.J. Simenon, Adam R. Brown, R. E. F. Einerhand,

Tópico(s)

Organic Light-Emitting Diodes Research

Resumo

Present polymeric microelectronic devices are typically unipolar devices, based on p-type semiconducting polymers. Bipolar devices stable under ambient conditions are desirable, but have not yet been reported due to a lack of stable n-type doped conducting polymers. Starting from the standard redox potentials of, especially, water and oxygen, stability requirements on electrode potentials of n-type doped conducting polymers are derived. The predictions are then compared with experimental data on stability of conducting polymers. A good agreement is obtained. An electrode potential of about 0 to + 0.5 V (SCE) is required for stable n-type doped polymers, similar to the requirement on the electrode potential for stable undoped p-type polymers. Consequences for bipolar devices are analysed. Huge overpotentials for the redox reaction with wet oxygen are required in order to realize thermodynamically stable bipolar devices from known doped p-type and n-type conducting polymers. Finally, possible solutions, accepting thermodynamic instability, are discussed.

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