Interface band gap engineering in InAsSb photodiodes
2005; American Institute of Physics; Volume: 87; Issue: 10 Linguagem: Inglês
10.1063/1.2041818
ISSN1520-8842
AutoresMathieu Carras, J.-L. Reverchon, G. Marre, Christian Renard, B. Vinter, X. Marcadet, V. Berger,
Tópico(s)Advanced Optical Sensing Technologies
ResumoThe optimization of an InAs0.91Sb0.09 based infrared detector has been performed. The importance of the interfaces between the active region and the contacts in generation recombination phenomena is demonstrated. The two sides of the active region are optimized independently through heterostructure band gap engineering. The use of an Al0.15In0.85As0.91Sb0.09 quaternary makes it possible reach a detectivity of 4.4×109cm√Hz∕W at 290 K and 1.4×1010cm√Hz∕W at 250 K at 3.39μm, offering the perspective of a noncryogenic infrared imaging in the 3–5μm band with quantum detectors.
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