Epitaxial growth of BaZrO3 films on single crystal oxide substrates using sol-gel alkoxide precursors
1997; Elsevier BV; Volume: 32; Issue: 12 Linguagem: Inglês
10.1016/s0025-5408(97)00159-1
ISSN1873-4227
AutoresM. Paranthaman, Shara S. Shoup, D. B. Beach, R. K. Williams, E. D. Specht,
Tópico(s)Semiconductor materials and devices
ResumoEpitaxial BaZrO3 (barium zirconium oxide) films were grown on single crystal substrates. A BaZrO3 precursor solution was prepared by sol-gel synthesis using an all-alkoxide route. The barium precursors were prepared by reacting barium metal with 2-methoxyethanol, and zirconium precursors were prepared by exchanging ligands between zirconium n-propoxide and 2-methoxyethanol. The resulting BaZrO3 precursor solution was partially hydrolyzed and spin-coated on sapphire (100), SrTiO3 (strontium titanium oxide) (100), and LaAlO3 (lanthanum aluminum oxide) (100) substrates. The films were post-annealed in oxygen at 800 °C for 2 min in a rapid thermal annealer. The coating and the annealing procedures were repeated three times to obtain the desired thickness, 300 nm. X-ray diffraction studies showed the presence of a single (100) cube texture for BaZrO3 films on SrTiO3 and LaAlO3 substrates. The BaZrO3 films grown on sapphire had a random texture. The BaZrO3 films grown on SrTiO3 substrates had a sharp texture compared to that on LaAlO3 substrates. This may be due to the relatively smaller lattice mismatch between SrTiO3 and BaZrO3.
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